| PART |
Description |
Maker |
| LBS15009 |
150MHz High-Loss SAW Filter 4.60MHz Bandwidth
|
SIPAT Co,Ltd
|
| MC33663 MC33663AJEF MC33663ALEF MC33663ASEF |
LIN 2.1 / SAEJ2602-2 Dual LIN Physical Layer
|
Freescale Semiconductor, Inc
|
| MOX-200001003BER MOX-200001003CER MOX-200001003DER |
0.25 Watt and 0.5 Watt Precision Thick Film Axial Terminal High Voltage/High Resistance
|
Ohmite Mfg. Co.
|
| D2231UK D2229UK D2230 D2230UK D2231 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D1207 D1207UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Seme LAB
|
| TIM7179-25UL |
HIGH POWER P1dB=44.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM7179-4UL |
HIGH POWER P1dB=36.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM7179-6UL |
HIGH POWER P1dB=38.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM7179-12UL |
HIGH POWER P1dB=41.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| MM908E62108 |
Integrated Quad Half-bridge and Triple High Side with Embedded MCU and LIN for High End Mirror
|
Freescale Semiconductor, Inc
|
| D2002UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
|
SemeLAB
Seme LAB
|
| D2005UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
